description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking ntc thermistor applications: ac motor control motion/servo control photovoltaic/wind ups inverter ordering information: example: select the complete module number you desire from the table below -i.e. cm1800dy-34s is a 1700v (v ces ), 1800 ampere dual half-bridge igbtmod? hvigbt power module. type current rating v ces amperes volts (x 50) cm 2500 24 outline drawing and circuit diagram c1 c1 e2 (e s 2) e1 (e s 1) g1 g2 tr 2 tr 1 di2 di1 c2 (c s 2) c1 (c s 1) e2 e2 c2e1 c2e1 th1 th2 ntc tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 e2 e2 c1 c1 e2 g2 c2 g1 e1 c1 c2e1 c2e1 h (12 places) a g g g g g b x y ad ac (screwing depth) z (screwing depth) ab aa h u t p s l l k n n n m (8 places) l k p q r l d e f f j (18 places) k ag aj am al ak ah af af af ae f f f af af af c f v w f dimensions inches millimeters a 12.2 310.0 b 5.6 142.5 c 4.96 126.0 d 1.89 48.0 e 1.85 46.9 f 0.28 7. 0 g 2.28 58.0 h 0.21 0.004 dia. 5.5 0.1 dia. j m6 m6 k 1.65 42.0 l 0.91 23.0 m m4 m4 n 0.35 9.0 p 0.47 11.9 q 0.21 5.4 r 0.33 8.5 s 4.92 125.0 t 0.6 15.0 dimensions inches millimeters u 0.83 21.0 v 1.5 38.0 w 2.04 51.9 x 1.85+0.04/-0.02 47.1+1.0/-0.5 y 1.55 39.4 z 0.63 16.0 aa 0.24 6.2 ab 0.16 4.0 ac 0.45 11.5 ad 2.01+0.04/-0.02 51.0+1.0/-0.5 ae 0.32 8.2 af 0.55 14.0 ag 2.05 52.0 ah 0.59 15.0 aj 7.01 178.0 ak 3.98 101.0 al 1.63 41.5 am 1.54 39.0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com dual half-bridge igbtmod? hvigbt series module 2500 amperes/1200 volts CM2500DY-24S 1 5/12 rev. 1
absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 83c) *2,*4 i c 2500 amperes collector current (pulse, repetitive) *3 i crm 5000 amperes total maximum power dissipation (t c = 25c) *2,*4 p tot 11535 watts emitter current, free wheeling diode forward current (t c = 25c) *2 i e *1 2500 amperes emitter current, free wheeling diode forward current (pulse, repetitive) *3 i erm *1 5000 amperes module characteristics symbol rating units isolation voltage (terminals to baseplate, f = 60hz, ac 1 minute) v iso 4000 v maximum junction temperature t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature t j(opr) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. label side each mark points to the center position of each chip. tr1 / tr2: igbt di1 / di2: fwdi th: ntc thermistor di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 th 0 24.5 40.7 54.2 82.7 96.2 87.7 101. 2 59.2 45.7 0 284.2 256.0 226.2 198.0 168.2 140.0 110.2 82.0 52.2 24.0 286.0 0 257.7 228.0 199.7 170.0 141.7 112.0 83.7 54.0 46.5 25.7 CM2500DY-24S dual half-bridge igbtmod? hvigbt module 2500 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 5/12 rev. 1
electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 5.0 a gate-emitter threshold voltage v ge(th) i c = 45ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 2500a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (terminal) i c = 2500a, v ge = 15v, t j = 125c *5 2.00 volts i c = 2500a, v ge = 15v, t j = 150c *5 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 2500a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 2500a, v ge = 15v, t j = 125c *5 1.90 volts i c = 2500a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 250 nf output capacitance c oes v ce = 10v, v ge = 0v 50 nf reverse transfer capacitance c res 4.2 nf gate charge q g v cc = 600v, i c = 2500a, v ge = 15v 5800 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 2500a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 700 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 2500a, v ge = 0v, t j = 25c *5 1.80 2.25 volts (terminal) i e = 2500a, v ge = 0v, t j = 125c *5 1.80 volts i e = 2500a, v ge = 0v, t j = 150c *5 1.80 volts emitter-collector voltage v ec *1 i e = 2500a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 2500a, v ge = 0v, t j = 125c *5 1.70 volts i e = 2500a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 2500a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 70 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 2500a, (tbd) mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, (tbd) mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load (tbd) mj internal lead resistance r cc' + ee' main terminals-chip, 0.11 m? per switch,t c = 25c *4 internal gate resistance r g per switch 1.1 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 case temperature (t c ) and heatsink temperature (t s ) are measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure on page 1 for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. CM2500DY-24S dual half-bridge igbtmod? hvigbt module 2500 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 5/12 rev. 1
electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c, r 100 = 493? *4 -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per igbt 13 k/kw thermal resistance, junction to case *4 r th(j-c) d per fwdi 22 k/kw contact thermal resistance, r th(c-f) thermal grease applied 3.1 k/kw case to heatsink *4 (per 1/2 module) *7 mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb auxiliary terminals, m4 screw 12 13 15 in-lb m s mounting, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 16 mm terminal to baseplate 25 mm clearance d a terminal to terminal 16 mm terminal to baseplate 24 mm weight m 2000 grams flatness of baseplate e c on centerline x, y *8 -50 + 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across p-n terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across g-e terminals 13.5 15.0 16.5 volts external gate resistance r g per switch 0 2 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. label side each mark points to the center position of each chip. tr1 / tr2: igbt di1 / di2: fwdi th: ntc thermistor di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 di2 tr 2 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1 di1 th 0 24.5 40.7 54.2 82.7 96.2 87.7 101. 2 59.2 45.7 0 284.2 256.0 226.2 198.0 168.2 140.0 110.2 82.0 52.2 24.0 286.0 0 257.7 228.0 199.7 170.0 141.7 112.0 83.7 54.0 46.5 25.7 mounting side mounting side recommended area for even application of thermally conductive grease (per baseplate) - concave + convex x e c y mounting side - concave + convex CM2500DY-24S dual half-bridge igbtmod? hvigbt module 2500 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 5/12 rev. 1
collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 0 1.0 0.5 2.5 1.5 2.0 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c v ge = 0v c ies c oes c res i c = 5000a i c = 2500a i c = 1000a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 5000 3000 2000 1000 4000 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 5000 2000 3000 4000 1000 v ge = 15v t j = 25c t j = 125c t j = 150c 10 -1 collector current, i c , (amperes) 10 3 10 2 10 3 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 4 collector current, i c , (amperes) 10 3 10 2 10 3 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 4 external gate resistance, r g , ( ) 10 3 10 0 10 1 10 2 switching time, (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 2500a t j = 125c inductive load t f 10 2 external gate resistance, r g , ( ) 10 3 10 0 10 1 10 2 switching time, (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 2500a t j = 150c inductive load t f 10 2 t j = 25c t j = 125c t j = 150c CM2500DY-24S dual half-bridge igbtmod? hvigbt module 2500 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 5/12 rev. 1
time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -1 10 0 10 1 10 -4 10 -5 10 -3 10 -2 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.16c/w (igbt) r th(j-c) = 0.17c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 -1 10 0 10 2 10 1 10 1 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v i c = 2500a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 2 10 3 10 1 10 4 half-bridge switching characteristics (typical) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 2000 4000 6000 8000 i c = 2500a v cc = 600v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 4 10 2 10 3 10 2 10 1 10 4 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 4 10 3 10 3 10 2 10 3 10 2 10 1 10 4 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 2 10 3 10 1 10 4 half-bridge switching characteristics (typical) e on e off e rr gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 -1 10 0 10 2 10 1 10 1 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v i c = 2500a t j = 150c e on e off e rr e on e off e rr CM2500DY-24S dual half-bridge igbtmod? hvigbt module 2500 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 5/12 rev. 1
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